Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy: Journal of Applied Physics: Vol 119, No 22
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD | SpringerLink
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Selectivity maps for GaAs and InAs SAG. (a) Illustration of the III−V... | Download Scientific Diagram
Vertical growth characterization of InAs nanowires grown by selective area growth on patterned InP(1 1 1)B substrate by a MOCVD method - ScienceDirect
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD | Crystal Growth & Design
XPS core-level spectra of GaP grown by MOCVD on Si (1 1 2). | Download Scientific Diagram
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters | Crystal Growth & Design
a) Top SEM view of GaAs/Ge pyramids grown by MOVPE on top of 8-μm-tall... | Download Scientific Diagram
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy - Strömberg - 2021 - physica status solidi (a) - Wiley Online Library
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy - Strömberg - 2021 - physica status solidi (a) - Wiley Online Library
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions: Applied Physics Reviews: Vol 8, No 2
a) Selective epitaxial growth of GaN nanowires inside Si N x... | Download Scientific Diagram
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
III-nitride core–shell nanorod array on quartz substrates | Scientific Reports
III–V material integration, IBM Research Zurich
Schematic process flow for (a–d) silicon (100) substrate preparation... | Download Scientific Diagram
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Crystals | Free Full-Text | Heteroepitaxial Growth of III-V Semiconductors on Silicon
Selective-area growth of h-BN. (a) SEM image of as-grown h-BN on the... | Download Scientific Diagram
Coatings | Free Full-Text | Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells
Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy | Scientific Reports
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
